GaInP-(Al/sub y/Ga/sub 1-y/)InP 670 nm quantum-well lasers for high-temperature operation
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 31 (12) , 2159-2164
- https://doi.org/10.1109/3.477741
Abstract
No abstract availableKeywords
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