Temperature dependence of the radiative recombination coefficient in GaAs(Al, Ga)As quantum wells
- 31 December 1985
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 1 (4) , 307-310
- https://doi.org/10.1016/0749-6036(85)90092-8
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactorJournal of Crystal Growth, 1984
- Temperature dependence of interface recombination and radiative recombination in (Al, Ga)As heterostructuresApplied Physics Letters, 1983
- Gain-current relation for GaAs lasers with n-type and undoped active layersIEEE Journal of Quantum Electronics, 1973
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964