The Effective Mass Tensor in Uniaxially Stressed n‐Type InSb
- 1 January 1970
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 38 (2) , 571-578
- https://doi.org/10.1002/pssb.19700380207
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- On the Plasma Minimum in Semiconductors with Anisotropic Energy BandsPhysica Status Solidi (b), 1969
- The Effect of Higher Bands on the Effective Masses in InSb and InAsPhysica Status Solidi (b), 1966
- Some Transport Properties of Semiconductors under Uniaxial StressPhysica Status Solidi (b), 1966
- Effective Masses in III‐V CompoundsPhysica Status Solidi (b), 1966
- Valence band structure of germaniumProceedings of the Physical Society, 1965
- Band parameters of semiconductors with zincblende, wurtzite, and germanium structureJournal of Physics and Chemistry of Solids, 1963
- Absorption and Dispersion of Indium AntimonideProceedings of the Physical Society. Section B, 1957
- Electron scattering in InSbJournal of Physics and Chemistry of Solids, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957
- Elastic Moduli of Indium AntimonidePhysical Review B, 1956