AlAs etch-stop layers for InGaAlAs/InP heterostructure devices and circuits
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 339-342
- https://doi.org/10.1109/iedm.1990.237161
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Novel use of resonant tunneling structures for optical and IR modulatorsSuperlattices and Microstructures, 1989
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- A proposed narrow-band-gap base transistor structureSuperlattices and Microstructures, 1989
- Analysis of second level resonant tunneling diodes and transistorsJournal of Applied Physics, 1988
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Selective etching characteristics of HF for Al x Ga 1-x As/GaAsElectronics Letters, 1985
- Peroxide etch chemistry on 〈100〉In0.53Ga0.47AsJournal of Vacuum Science and Technology, 1982
- Selective Etching of III‐V Compounds with Redox SystemsJournal of the Electrochemical Society, 1976
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973