Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures
- 21 November 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (21) , 2056-2058
- https://doi.org/10.1063/1.100496
Abstract
Transmission line model and end resistance measurements were made to determine the contact resistivity of Mg and Mg2Si contacts to Si doped n-type in the range 1018–1020 cm−3. The data are consistent with a barrier height of 0.4 eV for Mg and 0.52 eV for Mg2Si. The morphology, structure, and composition were studied using transmission electron microscopy.Keywords
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