High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm
- 31 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 296-298
- https://doi.org/10.1016/0921-5107(94)90068-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- CW room-temperature blue upconversion fibre laserElectronics Letters, 1992
- Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrateApplied Physics Letters, 1982
- V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxyJournal of Applied Physics, 1982
- Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelengthIEEE Journal of Quantum Electronics, 1980