Sputtered silicon as a new etching mask for GaAs devices
- 1 August 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (3) , 1218-1220
- https://doi.org/10.1063/1.337370
Abstract
The use of a sputtered silicon film as a new type of etching mask is reported for the first time. Its desirable properties arise because of similar material characteristics (thermal expansion coefficient, crystal structure, smaller misfit factors) and different etching behavior as compared to gallium arsenide. These properties are studied and utilized in the fabrication of GaAs/GaAlAs double heterostructure (DH) ridge waveguide devices.This publication has 8 references indexed in Scilit:
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