Abstract
In this paper the small-signal operation of space-charge-limited (SCL) diodes is studied in detail, by using a quantitative method previously suggested by the author. Typical cases, such ns SCL dielectric diodes with traps or field-dependent mobility, the punched-through SCL diode, the bulk negative mobility amplifier with zero ion density, the SCL vacuum diode, are included. The transport of space charge and the inertia of the carrier velocity with respect to electric field variations are both taken into account, in order to explain high-frequency negative resistance effects.