Population inversion through resonant interband tunneling
- 8 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (2) , 181-182
- https://doi.org/10.1063/1.105987
Abstract
We show in this letter that population inversion between subbands in a quantum well can be achieved through resonant interband tunneling. Two basic device configurations based on polytype heterostructures are proposed and analyzed. The estimated population inversion (n2−n1) could be as high as 3×1011/cm2 with a moderate injected current density 104 A/cm2 under a forward bias.Keywords
This publication has 15 references indexed in Scilit:
- Intersubband emission from semiconductor superlattices excited by sequential resonant tunnelingPhysical Review Letters, 1989
- Intersubband Auger recombination and population inversion in quantum-well subbandsPhysical Review B, 1989
- A novel superlattice infrared sourceJournal of Applied Physics, 1988
- Novel infrared band-aligned superlattice laserApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Sequential resonant tunneling through a multiquantum well superlatticeApplied Physics Letters, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- New mode of IR detection using quantum wellsApplied Physics Letters, 1984
- A new infrared detector using electron emission from multiple quantum wellsJournal of Vacuum Science & Technology B, 1983