A physicochemical interpretation of the photoconductivity of a-Si : H

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Abstract
Total hydrogen content and its distribution among SiH, SiH2 and other H' sites of sputtered a-Si : H films vary after posthydrogenation but the dangling bond concentrations remain constant. This can be explained by preferential H diffusion in the tissue zone where most of the hydrogen is located, while the residual dangling bonds are in the islands. The photoconductivity is controlled by spinless defects of the tissue zone originating from back defects of H on their various