AlGaN/GaN heterojunction bipolar transistor
- 1 June 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 20 (6) , 277-279
- https://doi.org/10.1109/55.767097
Abstract
We demonstrate the first GaN bipolar transistor. An AlGaN/GaN HBT structure was grown by MOCVD on c-plane sapphire substrate. The emitter was grown with an Al/sub 0.1/Ga/sub 0.9/N barrier to increase the emitter injection efficiency. Cl/sub 2/ RIE was used to pattern the emitter mesa, and selectively regrown base contact pads were implemented to reduce a contact barrier associated with RIE etch damage to the base surface. The current gain of the devices was measured to be as high as three with a base width of 200 nm. DC transistor characteristics were measured to 30 V V/sub CE/ in the common emitter configuration, with an offset voltage of 5 V. A gummel plot and base contact characteristics are also presented.Keywords
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