Microvoid formation in low-temperature molecular-beam-epitaxy-grown silicon
- 15 June 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (17) , 14257-14260
- https://doi.org/10.1103/physrevb.43.14257
Abstract
In a study of (100) Si growth by molecular-beam epitaxy, we have observed an interesting growth phenomenon associated with epitaxial growth at low temperatures. Electron-microscope imaging reveals that the growth surface no longer remains planar but develops a series of cusps with {111}-oriented facets that generate linear arrays of spherical defects. Both electron microscopy and variable-energy positron-annihilation spectroscopy have been used to determine that the defects are in fact microvoids.Keywords
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