Low temperature kinetics of Si(100) MBE growth
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 307-313
- https://doi.org/10.1016/0040-6090(89)90455-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Kinetics of ordered growth of Si on Si(100) at low temperaturesPhysical Review B, 1989
- Properties of Si layers grown by molecular beam epitaxy at very low temperaturesApplied Physics Letters, 1989
- Growth mechanism for molecular-beam epitaxy of group-IV semiconductorsPhysical Review B, 1988
- Summary Abstract: Epitaxy of monolayer silicon films studied by optical second-harmonic generationJournal of Vacuum Science & Technology B, 1987
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978