Properties of Si layers grown by molecular beam epitaxy at very low temperatures
- 27 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (9) , 819-821
- https://doi.org/10.1063/1.100857
Abstract
(100) silicon molecular beam epitaxy films with etch pit densities below 103 cm−2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously Sb-doped samples (Ts =250 °C, 300 °C) are found to match reasonably bulk values. δ doping at a monolayer Sb deposition shows a dopant activation of 0.45–0.81 with no detectable broadening at Ts =200 °C.Keywords
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