Effects of transverse doping variations on the transient response of silicon avalanche shaper devices
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (8) , 1761-1768
- https://doi.org/10.1109/16.704376
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Silicon diodes in avalanche pulse-sharpening applicationsIEEE Transactions on Plasma Science, 1997
- High-field fast-risetime pulse failures in 4H- and 6H-SiC pn junction diodesJournal of Applied Physics, 1996
- Bulk breakdown of high field silicon-dielectric systemsIEEE Transactions on Electron Devices, 1995
- Electro-optic imagery of high-voltage GaAs photoconductive switchesIEEE Transactions on Electron Devices, 1995
- Electron-beam controlled switching using quartz and polycrystalline ZnSIEEE Transactions on Electron Devices, 1994
- Lock-on effect in pulsed-power semiconductor switchesJournal of Applied Physics, 1992
- Recovery of high-field GaAs photoconductive semiconductor switchesIEEE Transactions on Electron Devices, 1991
- Modeling GaAs high-voltage, subnanosecond photoconductive switches in one spatial dimensionIEEE Transactions on Electron Devices, 1990
- Electron-beam-controlled high-power semiconductor switchesIEEE Transactions on Electron Devices, 1989
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965