Lock-on effect in pulsed-power semiconductor switches
- 15 March 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (6) , 3036-3038
- https://doi.org/10.1063/1.350988
Abstract
Certain high-voltage pulsed-power switches based on semi-insulating GaAs or InP exhibit a ‘‘lock-on’’ effect. In this paper, this effect is argued to be fundamentally a transferred-electron effect, and its experimentally observed characteristics are explained. The lock-on effect causes high forward drop and high power dissipation for certain pulsed-power switches based on GaAs and various other direct-gap materials.This publication has 9 references indexed in Scilit:
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