GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay
- 20 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 742-744
- https://doi.org/10.1063/1.100879
Abstract
Silicon-doped n-type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high-power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In our experiment, electric fields as high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage ‘‘lock-on’’ effect was observed.Keywords
This publication has 4 references indexed in Scilit:
- Cryogenic Silicon Photoconductive Switches For High Power LasersPublished by SPIE-Intl Soc Optical Eng ,1988
- An optically controlled closing and opening semiconductor switchJournal of Applied Physics, 1988
- Copper-related deep level defects in III–V semiconductorsJournal of Applied Physics, 1983
- Properties of High-Resistivity Gallium Arsenide Compensated with Diffused CopperJournal of Applied Physics, 1961