An evaluation of horizontal Bridgman-grown, undoped, semi-insulating GaAs
- 1 May 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (9) , 4413-4417
- https://doi.org/10.1063/1.340185
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Optical mapping of residual stress in Czochralski grown GaAsApplied Physics Letters, 1986
- Factors affecting the spatial distribution of the principal midgap donor in semi-insulating gallium arsenide wafersJournal of Applied Physics, 1985
- Effects of thermal annealing on semi-insulating undoped GaAs grown by the liquid-encapsulated Czochralski techniqueJournal of Applied Physics, 1985
- Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAsJournal of Crystal Growth, 1984
- Improvement of crystal homogeneities in liquid-encapsulated Czochralski grown, semi-insulating GaAs by heat treatmentApplied Physics Letters, 1984
- Symmetrical contours of deep level EL2 in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1983
- Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donorsApplied Physics Letters, 1982
- Stoichiometry-controlled compensation in liquid encapsulated Czochralski GaAsApplied Physics Letters, 1982
- An evaluation of the thermal and elastic constants affecting GaAs crystal growthJournal of Crystal Growth, 1980
- Dislocation Etch Pits in Single Crystal GaAsPhysica Status Solidi (b), 1969