High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppression
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (4) , 696-704
- https://doi.org/10.1109/3.17333
Abstract
The operation principles of a high-power high-efficiency GaAlAs superluminescent diode based on an internal absorber for lasing suppression is described. The absorber is based on an unpumped/reverse-biased section in the device, and the superluminescent diode characteristic depends heavily on the bias condition of the absorber section. The very high efficiency of the device arises from the strong waveguiding effect of the buried heterostructure. A theory which accurately describes the various device characteristics is described.Keywords
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