Temperature dependence of surface electronic structure of Si(111) surface
- 31 May 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 46 (5) , 401-404
- https://doi.org/10.1016/0038-1098(83)90457-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Occurrence of disordered magnetic moments at the Si(111) unreconstructed surfacePhysical Review B, 1982
- Effects of exchange-correlation and surface strain on the subband separations in Si(111) surface inversion layersSurface Science, 1982
- Spin Polarization and Atomic Geometry of the Si(111) SurfacePhysical Review Letters, 1981
- The (1 × 1) structure of Si(111): Strong correlations in surface state bands?Surface Science, 1981
- Angle-resolved ultraviolet photoemission study of Si(111) 7 × 7 and 1 × 1 surfacesSolid State Communications, 1981
- The Si(111) 7 × 7 TO “1 × 1” transitionSurface Science, 1981
- Similarity between the Si(111)-(7×7) and impurity-stabilized Si(111)-(1×1) surfacesSolid State Communications, 1980
- Atomic structure of an impurity-stabilized Si{111} surface: Refinement using a combined-layer methodPhysical Review B, 1980