Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A) , L537
- https://doi.org/10.1143/jjap.29.l537
Abstract
In order to overcome a problem of the lattice mismatch between heavily carbon-doped p-GaAs and moderately doped GaAs, we have grown heavily carbon-doped InGaAs with a hole concentration of 2.6×1020 cm-3 and resistivity of 6.5×10-4 Ω·cm by MOMBE, in which the indium content was adjusted so that its lattice constant became equal to that of SI GaAs. In the lattice-matched InGaAs, the indium molar fraction determined from the Raman spectrum and the bandgap from the 4.2 K photoluminescence spectrum are 0.05 and 1.396 eV, respectively.Keywords
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