Dual-damascene interconnects with 0.28 μm vias using in situ copper doped aluminum chemical vapor deposition
- 22 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 781-784
- https://doi.org/10.1109/iedm.1997.650498
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Aluminum Metallization Using a Combination of Chemical Vapor Deposition and SputteringJournal of the Electrochemical Society, 1997
- In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light IntensityJapanese Journal of Applied Physics, 1995