In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light Intensity
- 1 April 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (4A) , L429-432
- https://doi.org/10.1143/jjap.34.l429
Abstract
A nondestructive, noncontact monitoring method has been developed for Al chemical vapor deposition (CVD). This monitoring method involves irradiating He-Ne laser light on the substrate surface and detecting the reflected light intensity. The intensity changes with deposition time corresponded to the following stage of Al island formation, island coalescence, continuous smooth film formation, and surface roughening. The effectiveness of this method was demonstrated by applying it to Al growth on both in situ sputtered Ti and SiO2 pretreated with tetrakisdimethylamino-titanium for nucleation enhancement.Keywords
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