Laser direct writing of aluminum conductors
- 30 May 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (22) , 1865-1867
- https://doi.org/10.1063/1.99609
Abstract
We report, for the first time, the laser direct writing of high-conductivity aluminum interconnects from dimethylaluminum hydride (DMAlH). These lines were deposited from this metalorganic gas using a focused deep-ultraviolet laser beam, and the deposition process was studied as a function of several process parameters. Electrical measurements and Auger electron spectroscopy were used to characterize the quality of the laser-deposited films.Keywords
This publication has 6 references indexed in Scilit:
- Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuitsApplied Physics Letters, 1987
- Laser projection patterned aluminum metallization for integrated circuit applicationsApplied Physics Letters, 1987
- Direct writing of metal conductors with near-uv lightApplied Physics B Laser and Optics, 1987
- Surface Photochemically Activated Chemical Vapor Deposition of Patterned Aluminum Thin FilmsMRS Proceedings, 1986
- Wafer-scale laser pantography: Fabrication of n-metal-oxide-semiconductor transistors and small-scale integrated circuits by direct-write laser-induced pyrolytic reactionsApplied Physics Letters, 1983
- Ultraviolet photodecomposition for metal deposition: Gas versus surface phase processesApplied Physics Letters, 1983