Aging tests of low threshold current InGaAsP/InP V-grooved substrate buried heterostructure lasers emitting at 1.3-μm wavelength
- 1 October 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (7) , 583-584
- https://doi.org/10.1063/1.93616
Abstract
Aging tests of InGaAsP/InP V-grooved substrate buried heterostructure lasers have performed. The cw threshold current of these lasers is around 20 mA at 25 °C. The laser are tested at 10, 50, and 70 °C with a constant optical power of 5 mW/facet and are still operating at over 5000 h with only a slight increase in the driving current. The far-field pattern and lasing spectrum do not change appreciably during aging, and self-pulsation is not observed after aging.Keywords
This publication has 3 references indexed in Scilit:
- V-grooved substrate buried heterostructure InGaAsP/InP laserElectronics Letters, 1981
- Accelerated aging test of InGaAsP/InP double-heterostructure laser diodes with single transverse modeApplied Physics Letters, 1981
- Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication SystemsJournal of Optical Communications, 1980