Accelerated aging test of InGaAsP/InP double-heterostructure laser diodes with single transverse mode

Publisher Website
Google Scholar
Abstract
Aging tests of InGaAsP/InP double‐heterostructure (DH) laser diodes with single transverse mode have been performed at 50 and 70 °C under constant optical power operation. The devices were self‐aligned‐structure DH laser diodes bonded with AuSn‐alloy solder. Samples for 3‐mW/facet operation at 50 °C are operating at over 5000 H, those for 5‐mW/facet operation at 50 °C are operating at over 4500 H, and those for 3‐mW/facet operation at 70 °C are operating at over 3500 H. Far‐field patterns parallel to the junction plane in these samples do not change in this aging. Averaged increasing rates of the driving current to maintain the specified optical power are 1.8×10−6/H for 3‐mW operation at 50 °C, 48×10−6/H for 5‐mW operation at 50 °C, and 1.3×10−5/H for 3‐mW operation at 70 °C.