Radiation Hardness and Annealing Tests of a Custom VLSI Device
- 1 January 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 34 (1) , 491-494
- https://doi.org/10.1109/TNS.1987.4337391
Abstract
Several NMOS custom VLSI ("Microplex") circuits have been irradiated with a 500 rad/hr 60Co source. With power off three of four chips tested have survived doses exceeding 1 Mrad. With power on at a 25% duty cycle, all chips tested failed at doses ranging from 10 to 130 krad. Annealing at 200°C was only partially successful in restoring the chips to useful operating conditions.Keywords
This publication has 6 references indexed in Scilit:
- Initial Beam Test Results from a Silicon-Strip Detector with VLSI ReadoutIEEE Transactions on Nuclear Science, 1986
- First results from a silicon-strip detector with VLSI readoutNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- The effect of radiation on ion-implanted silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986
- Radiation damage in silicon detectorsNuclear Instruments and Methods in Physics Research, 1984
- Development of high density readout for silicon strip detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1984
- The effect of radiation on the energy resolution of ion-implanted silicon detectorsNuclear Instruments and Methods in Physics Research, 1983