Etch rate behaviour of SiO2 films chemically vapour deposited from silane, oxygen and nitrogen gas mixtures at low temperatures
- 1 April 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 114 (3) , 291-294
- https://doi.org/10.1016/0040-6090(84)90126-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Efficiency of the SiH4 oxidation reaction in chemical vapour deposition of SiO2 films at low temperatureThin Solid Films, 1983
- An Infrared Absorption Study of LTCVD Silicon DioxideJournal of the Electrochemical Society, 1983
- Comparison of properties of dielectric films deposited by various methodsJournal of Vacuum Science and Technology, 1977
- Determination of the density and the relaxation time of silicon-metal interfacial statesSolid-State Electronics, 1975