The Child-Langmuir law as a model for electron transport in semiconductors
- 1 May 1996
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 39 (5) , 737-744
- https://doi.org/10.1016/0038-1101(95)00149-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- The Child–Langmuir Law for the Boltzmann Equation of SemiconductorsSIAM Journal on Mathematical Analysis, 1995
- On a mathematical model for hot carrier injection in semiconductorsMathematical Methods in the Applied Sciences, 1994
- On a penalization of the Child–Langmuir emission condition for the one-dimensional Vlasov–Poisson equationAsymptotic Analysis, 1992
- A deterministic particle method for the kinetic model of semiconductors: The homogeneous field modelSolid-State Electronics, 1991
- An asymptotic analysis of the one-dimensional Vlasov–Poisson system: the Child–Langmuir lawAsymptotic Analysis, 1991
- A particle-in-cell method as a tool for diode simulationsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1988
- Measurement of J/V characteristics of a GaAs submicron n + - n − - n + diodeElectronics Letters, 1982
- Near ballistic electron transport in GaAs devices at 77°KSolid-State Electronics, 1981
- Ballistic transport in semiconductor at low temperatures for low-power high-speed logicIEEE Transactions on Electron Devices, 1979
- Electrical Discharges in Gases Part II. Fundamental Phenomena in Electrical DischargesReviews of Modern Physics, 1931