Theory of lifetime measurements with the scanning electron microscope: Transient analysis
- 30 June 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (6) , 447-450
- https://doi.org/10.1016/0038-1101(76)90004-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Theory of life time measurements with the scanning electron microscope: Steady stateSolid-State Electronics, 1976
- Invertible ConvolutionsMathematische Nachrichten, 1975
- Measurement of spatial variations of the carrier lifetime in silicon power devicesPhysica Status Solidi (a), 1972
- Injected Current Carrier Transport in a Semi-Infinite Semiconductor and the Determination of Lifetimes and Surface Recombination VelocitiesJournal of Applied Physics, 1955