A high-performance all-enhancement NMOS operational amplifier
- 1 December 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (6) , 1070-1077
- https://doi.org/10.1109/jssc.1979.1051317
Abstract
An NMOS operational amplifier has been designed and fabricated using only enhancement mode MOSFETs in a circuit that employs a novel feedforward compensation scheme. Specifications achieved include high open loop gain (2200), low-power (15 mW or less depending on the load), fast settling time (0.1 percent settling time in 3 /spl mu/s for a 4 V input step and a 10 pF load), and small area. While this amplifier uses only a small number of transistors, its performance is comparable to that of recent depletion load amplifiers. Fewer critical steps are needed to fabricate this amplifier, making it attractive for large analog/digital LSI circuits.Keywords
This publication has 5 references indexed in Scilit:
- High-performance NMOS operational amplifierIEEE Journal of Solid-State Circuits, 1978
- Design considerations in single-channel MOS analog integrated circuits-a tutorialIEEE Journal of Solid-State Circuits, 1978
- An integrated NMOS operational amplifier with internal compensationIEEE Journal of Solid-State Circuits, 1976
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- A fast-settling monolithic operational amplifier using doublet compression techniquesIEEE Journal of Solid-State Circuits, 1974