An integrated NMOS operational amplifier with internal compensation
- 1 December 1976
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 11 (6) , 748-753
- https://doi.org/10.1109/jssc.1976.1050813
Abstract
An internally compensated differential operational amplifier is described which has been fabricated using n-channel Al-gate MOS technology. Only enhancement mode devices are used, and the circuit has been designed so that its performance is insensitive to process parameters.Keywords
This publication has 3 references indexed in Scilit:
- Low-noise integrated silicon-gate FET amplifierIEEE Journal of Solid-State Circuits, 1975
- Comparison of input offset voltage of differential amplifiers using bipolar transistors and field-effect transistorsIEEE Journal of Solid-State Circuits, 1970
- A MOST integrated differential amplifierIEEE Journal of Solid-State Circuits, 1969