Comparison of input offset voltage of differential amplifiers using bipolar transistors and field-effect transistors
- 1 June 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 5 (3) , 126-129
- https://doi.org/10.1109/JSSC.1970.1050090
Abstract
A field-effect transistor (whether junction type or MOS type) has very high input impedance. For those who desire to achieve a higher input impedance, it is often asked `Why aren't FET pairs used as input stages and bipolar transistors used as output stages, since compatible FET and bipolar transistor monolithic structures have been developed?' This correspondence is a study of this question.Keywords
This publication has 5 references indexed in Scilit:
- A monolithic junction FET-n-p-n operational amplifierIEEE Journal of Solid-State Circuits, 1968
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- An integrated FET analog switchProceedings of the IEEE, 1964
- A unipolar-bipolar transistor configuration for integrated audio amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1963
- Unipolar "Field-Effect" TransistorProceedings of the IRE, 1953