Q-band GaAs MESFET ocillator with 30% efficiency

21 January 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (2) , 83-84
https://doi.org/10.1049/el:19880054

Abstract

Microstrip GaAs MESFET oscillators using 75 × 0.25 μm devices have achieved record efficiencies and power densities at Q-band. At 34 GHz, an efficiency of 30% was obtained with an output power of 33 mW. A similar output power was achieved at 40 GHz with an efficiency of 25%. The corresponding power densities are in excess of 0.4 W per millimetre of gate width.

Keywords

GAAS
25 TO 30 PERCENT
Q-BAND
MESFET OSCILLATOR
SOLID STATE MICROWAVE CIRCUITS
34 TO 40 GHZ
III-V SEMICONDUCTORS
HIGH EFFICIENCY OPERATION
MICROSTRIP TYPE
33 MW

This publication has 1 reference indexed in Scilit:

Millimeter-Wave Monolithic GaAs Power FET Amplifiers
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986