A comparison of static bulk-channel charge-coupled device characteristics using uniform, Gaussian and measured impurity distributions
- 30 September 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (9) , 789-797
- https://doi.org/10.1016/0038-1101(77)90007-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The validity of the depletion approximation applied to a bulk channel charge-coupled deviceIEEE Transactions on Electron Devices, 1976
- Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devicesSolid-State Electronics, 1975
- Potentials and fields in buried-channel CCD's: A two-dimensional analysis and design studyIEEE Transactions on Electron Devices, 1975
- A simple model of a buried channel charge coupled deviceSolid-State Electronics, 1974
- Design Considerations for a Two-Phase, Buried-Channel, Charge-Coupled DeviceBell System Technical Journal, 1974
- Charge Distribution in Buried-Channel Charge-Coupled DevicesBell System Technical Journal, 1973
- Peristaltic charge-coupled device: a new type of charge-transfer deviceElectronics Letters, 1972
- Diffused Junction Depletion Layer CalculationsBell System Technical Journal, 1960
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958
- The Use of an Interference Microscope for Measurement of Extremely Thin Surface LayersBell System Technical Journal, 1956