Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell
- 31 January 2001
- journal article
- Published by Elsevier in Solar Energy Materials and Solar Cells
- Vol. 65 (1-4) , 525-532
- https://doi.org/10.1016/s0927-0248(00)00136-7
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Grain boundary and dislocation effects on the PV performance of high-purity siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- In-situ control in zone-melting recrystallization process for formation of high-quality thin film polycrystalline SiPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- 21.5% Efficient thin silicon solar cellProgress In Photovoltaics, 1996
- 17% Eficient thin‐film silicon solar cell by liquid‐phase epitaxyProgress In Photovoltaics, 1995
- Kinetics of the Epitaxial Growth of Silicon from a Tin MeltJournal of the Electrochemical Society, 1977