Very low-current and small-size GaAs MMICs for L-band front-end applications
- 13 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Very-low-current and small-size GaAs MMICs (monolithic microwave integrated circuits) were developed for L-band front-end applications. The MMICs fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMICs: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB with small LO power of -3 dBm. Total current dissipation of the two MMICs is less than 8 mA with 3-V drain bias voltage.Keywords
This publication has 8 references indexed in Scilit:
- A uni-planar MMIC 26-GHz-band receiverPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Design of an L-band monolithic GaAs receiver front-end with low power consumptionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Uniplanar MMICs and their applicationsIEEE Transactions on Microwave Theory and Techniques, 1988
- 0.3- mu m advanced SAINT FET's having asymmetric n/sup +/-layers for ultra-high-frequency GaAs MMIC'sIEEE Transactions on Electron Devices, 1988
- Normally-Off Mesfet Analogue CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- A Low-Noise GaAs Monolithic Broad-Band Amplifier Using a Drain Current Saving Technique (Short Paper)IEEE Transactions on Microwave Theory and Techniques, 1985
- GaAs Monolithic Low-Power Amplifiers with RC Parallel Feedback (Short Paper)IEEE Transactions on Microwave Theory and Techniques, 1984
- Low-Noise, Low Power Dissipation GaAs Monolithic Broad-Band AmplifiersIEEE Transactions on Microwave Theory and Techniques, 1983