Surface electronic structure of monolayer Sb on InP(110)
- 1 January 1992
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 56-58, 218-223
- https://doi.org/10.1016/0169-4332(92)90237-r
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The growth of bismuth and antimony overlayers on InP(110)Journal of Vacuum Science & Technology B, 1990
- New surface atomic structures for column V overlayers on the (110) surfaces of III–V compound semiconductorsJournal of Vacuum Science & Technology B, 1990
- Bulk and surface electronic bands of InP(110) determined by angle-resolved photoemissionPhysical Review B, 1987
- Analysis of low-energy electron diffraction and angle-resolved photoemission from InP(110)-p(1 × 1)-Sb (1 ML)Surface Science, 1985
- Sb overlayers on (110) surfaces of III-V semiconductors: Total-energy minimization and surface electronic structurePhysical Review B, 1985
- The adsorption of Ga and Sb on cleaved InP surfacesVacuum, 1983
- The electronic structure of cleaved indium phosphide (110) surfaces: experiment and theoryJournal of Physics C: Solid State Physics, 1983
- Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)Physical Review B, 1982
- Angle‐Resolved Photoemission as a Tool for the Study of SurfacesAdvances in Chemical Physics, 1982
- Final-state symmetry and polarization effects in angle-resolved photoemission spectroscopySolid State Communications, 1977