Laser-induced InAs/GaAs quantum dot intermixing

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Abstract
Laser annealing of InAs/GaAs quantum-dot (QD) microstructures has been investigated for selective area tuning of their electronic shell structure. Extensive blueshifts of the QD excited states were observed following 20–40 s laser irradiation. In the most extreme case, we were able to shift the position of the ground state transition by 298 meV, i.e., to the spectral region where the photoluminescence signal originates from the as-grown InAs wetting layer. A reduction from ∼50 to 8 meV of the full width at half maximum of the PL peak corresponding to this transition indicates a drastic change in the structural characteristics of the investigated QD ensemble. The attractive feature of the laser-QD-intermixing technique is that it offers the possibility of obtaining targeted blueshifts and inter-sublevel energy spacing on the lateral scale required in the fabrication of QD-based integrated optoelectronic devices and, possibly, photonic band gap crystals.