Size and shape engineering of vertically stacked self-assembled quantum dots
- 1 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 1131-1135
- https://doi.org/10.1016/s0022-0248(98)01539-5
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dotsApplied Physics Letters, 1998
- Excited states and energy relaxation in stacked InAs/GaAs quantum dotsPhysical Review B, 1998
- Temperature effects in semiconductor quantum dot lasersMaterials Science and Engineering: B, 1998
- Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dotsApplied Physics Letters, 1997
- Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxyJournal of Crystal Growth, 1997
- Direct formation of vertically coupled quantum dots in Stranski-Krastanow growthPhysical Review B, 1996
- Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAsPhysical Review Letters, 1996
- Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)Physical Review Letters, 1995
- Self-Organization of Boxlike Microstructures on GaAs (311)B Surfaces by Metalorganic Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1994
- Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985