Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells
- 30 June 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 253 (1-4) , 203-207
- https://doi.org/10.1016/s0022-0248(03)01109-6
Abstract
No abstract availableKeywords
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