Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature
- 10 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (6) , 815-817
- https://doi.org/10.1063/1.122043
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaNApplied Physics Letters, 1997
- Recombination dynamics of localized excitons in N-N multiple quantum wellsPhysical Review B, 1997
- Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVDMRS Internet Journal of Nitride Semiconductor Research, 1997
- Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser DiodesMRS Internet Journal of Nitride Semiconductor Research, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Recombination dynamics in InGaN quantum wellsApplied Physics Letters, 1996
- Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 KApplied Physics Letters, 1996
- Solid phase immiscibility in GaInNApplied Physics Letters, 1996
- Shortest wavelength semiconductor laser diodeElectronics Letters, 1996