Structural and Electronic Properties of Polycrystalline Cu(In,Ga)(S,Se)2 Alloys
- 1 January 2001
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
We present a systematic study on the polycrystalline Cu(In,Ga)(S,Se)2 alloys with a gallium to indium ratio of Ga/(Ga+In)2 alloy system. We find that contrary to the Cu(In,Ga)(Se)2 alloy system the valence band position is significantly lowered with increasing bandgap.Keywords
This publication has 14 references indexed in Scilit:
- Electrical characterization of Cu(In,Ga)Se2 thin-film solar cells and the role of defects for the device performanceSolar Energy Materials and Solar Cells, 2000
- Electronic properties of CuGaSe2-based heterojunction solar cells. Part II. Defect spectroscopyJournal of Applied Physics, 2000
- Distinction between bulk and interface states in CuInSe2/CdS/ZnO by space charge spectroscopyJournal of Applied Physics, 1998
- Improved Cu(In,Ga)(S,Se)2 thin film solar cells by surface sulfurizationSolar Energy Materials and Solar Cells, 1997
- Determination of defect distributions from admittance measurements and application to Cu(In,Ga)Se2 based heterojunctionsJournal of Applied Physics, 1996
- A model for the successful growth of polycrystalline films of CuInSe2 by multisource physical vacuum evaporationAdvanced Materials, 1993
- Study on dc and ac Switching Behavior in Liquid Crystal Displays with Polymer Boundaries using a 4-Component CircuitJapanese Journal of Applied Physics, 1993
- Solar cells based on CuIn(Se, S)2Solar Energy Materials and Solar Cells, 1992
- Transition-metal impurities in semiconductors and heterojunction band lineupsPhysical Review B, 1988
- Deep-Level Impurities: A Possible Guide to Prediction of Band-Edge Discontinuities in Semiconductor HeterojunctionsPhysical Review Letters, 1985