Spin splitting of the electron subbands in the electrostatic interface potential on HgCdTe
- 1 June 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (6) , 491-494
- https://doi.org/10.1088/0268-1242/4/6/012
Abstract
The authors determine the electric-field-induced spin splitting of the electron subbands on the surface of narrow gap HgCdTe from measurements of the oscillatory magnetoconductivity and cyclotron resonance. The coalescence and crossing of the Landau levels in the Shubnikov-de Haas oscillations is analysed in terms of the model developed by Bychkov and Rashba (extended to include nonparabolicity). Together with the resonance data it allows them to obtain the dispersion E0+or-(k/sub ///) of the electrically spin-split ground state subband. The experiments provide for the first time a number to be compared with sophisticated subband calculations.Keywords
This publication has 12 references indexed in Scilit:
- Spin splitting in semiconductor heterostructures forB→0Physical Review Letters, 1988
- Bound states in inversion layers on p-Hg1-xCdxTe: self-consistent resultsSemiconductor Science and Technology, 1988
- Oscillatory effects and the magnetic susceptibility of carriers in inversion layersJournal of Physics C: Solid State Physics, 1984
- Lifting of the Spin Degeneracy of Hole Subbands in a Surface Electric Field on SiliconPhysical Review Letters, 1984
- Energy Structure and Quantized Hall Effect of Two-Dimensional HolesPhysical Review Letters, 1983
- Electron Spin Resonance onHeterostructuresPhysical Review Letters, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Theory of space-charge layers in narrow-gap semiconductorsSurface Science, 1982
- Quantized Surface States of a Narrow-Gap SemiconductorJournal of the Physics Society Japan, 1974
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968