Quantized Surface States of a Narrow-Gap Semiconductor
- 1 November 1974
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 37 (5) , 1325-1333
- https://doi.org/10.1143/jpsj.37.1325
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Magnetoconductance Oscillations of-Type Inversion Layers in InSb SurfacesPhysical Review B, 1972
- Small-gap, Kane model semiconductors in magnetic fieldsSolid State Communications, 1971
- Continuously Voltage-Tunable Line Absorption in Surface QuantizationPhysical Review Letters, 1971
- Self-Induced Deficiency State in Degenerate SemiconductorsPhysical Review Letters, 1971
- Effects of a Tilted Magnetic Field on a Two-Dimensional Electron GasPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Inversion Asymmetry Effects on Oscillatory Magnetoresistance in HgSePhysical Review Letters, 1967
- Oscillatory Magnetoresistance in Mercuric SelenidePhysical Review B, 1965
- Mobility in Inversion Layers: Theory and ExperimentPublished by University of Pennsylvania Press ,1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957