Continuously Voltage-Tunable Line Absorption in Surface Quantization
- 4 October 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 27 (14) , 925-928
- https://doi.org/10.1103/physrevlett.27.925
Abstract
Photoconductance response due to optical transitions induced by 44.3-meV laser radiation between surface subbands in the inversion layer on a (001) surface of -type silicon is reported. The negative response indicates decreased mobility of electrons in the excited states. Magnetic fields normal to the surface accentuate the response for certain levels because of parallel-motion band mixing. These measurements are the first to demonstrate the large voltage tunability inherent in this electronic energy level system.
Keywords
This publication has 10 references indexed in Scilit:
- Quantum mechanical calculation of the carrier distribution and the thickness of the inversion layer of a MOS field-effect transistorSolid-State Electronics, 1970
- Capacitance Observations of Landau Levels in Surface QuantizationPhysical Review Letters, 1968
- Energy and Lifetime of Space-Charge-Induced Localized StatesPhysical Review B, 1968
- Mobility Anisotropy and Piezoresistance in Silicon p-Type Inversion LayersJournal of Applied Physics, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Optical Absorption Due to Space-Charge-Induced Localized StatesPhysical Review B, 1967
- Magneto-Oscillatory Conductance in Silicon SurfacesPhysical Review Letters, 1966
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966
- DENSITY OF SiO2–Si INTERFACE STATESApplied Physics Letters, 1966
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962