On the effect of hot-carrier stressing on MOSFET terminal capacitances
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (3) , 384-386
- https://doi.org/10.1109/16.2465
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A capacitance method to determine the gate-to-drain/Source overlap length of MOSFET'sIEEE Electron Device Letters, 1987
- Hot-electron-induced degradation in MOSFET's at 77 KIEEE Transactions on Electron Devices, 1985
- Instability of MOSFET's due to redistribution of Oxide chargesIEEE Transactions on Electron Devices, 1982
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981