Alloy broadening of the emission barrier of the D X center in aluminum gallium arsenide

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Abstract
The effect of alloy fluctuations on the emission barrier of the DX center in aluminum gallium arsenide (AlGaAs) is studied by constant capacitance deep level transient spectroscopy using Si‐doped and Sn‐doped samples grown by different growth techniques. All the samples showed single broadened peaks which were analyzed by assuming a Gaussian distribution for the emission barrier. The full width at half maximum for the emission barrier spread was found to be the same (∼0.05+0.005 eV) for all the samples and is of the same order as the reported capture barrier spread for Si‐doped AlGaAs, which strongly suggests that the binding energy spread of the DX center in AlGaAs is very small.