Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers
- 30 December 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 183 (1-2) , 255-262
- https://doi.org/10.1016/0040-6090(89)90450-1
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- New approach to the kinetics of silicon vapor phase epitaxy at reduced temperatureApplied Physics Letters, 1987
- In-situ light scattering studies of substrate cleaning and layer nucleation in silicon MBEJournal of Crystal Growth, 1987
- Real Time Observation of Periodic Step Arrays During Silicon Vapour Phase HomoepitaxyMRS Proceedings, 1987
- Microscopic growth mechanisms of semiconductors: Experiments and modelsJournal of Crystal Growth, 1984
- Differential phase contrast in scanning optical microscopyJournal of Microscopy, 1984
- Silicon molecular beam epitaxyThin Solid Films, 1983
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979
- Morphology of silicon epitaxial layers grown by undercooling of a saturated tin meltJournal of Crystal Growth, 1977
- Singular instabilities on LPE GaAs, CVD Si, and MBE InP growth surfacesApplied Physics Letters, 1977
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971