Morphology of silicon epitaxial layers grown by undercooling of a saturated tin melt
- 1 December 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 41 (2) , 199-204
- https://doi.org/10.1016/0022-0248(77)90046-x
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Substrate orientation and surface morphology of GaAs liquid phase epitaxial layersJournal of Crystal Growth, 1974
- Some observations of the surface morphologies of GaAs layers grown by liquid phase epitaxyJournal of Crystal Growth, 1973
- Surface morphology of liquid-phase epitaxial layersJournal of Applied Physics, 1973
- A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in GaJournal of Crystal Growth, 1972
- Improved surface quality of solution grown GaAs and Pb1−xSnxTe epitaxial layers: A new techniqueJournal of Crystal Growth, 1972
- The growth and properties of LPE GaAsSolid-State Electronics, 1972